晶体大小:
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3~10 mm
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晶体种类:
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Magnetic semiconductor,红外半导体,拓扑材料,热电材料
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纯度:
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>99.999 %
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表征方法:
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EDS,SEM,Raman
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bandgap:
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0.4 eV
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更多信息:
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请咨询:tztczj@163.com
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参考文献:
1, Fu, Qundong, et al. "Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates." Advanced Materials 31.1 (2019): 1804945.
2,Ying, Jianghua, et al. "Magnitude and spatial distribution control of the supercurrent in Bi2O2Se-based Josephson junction." Nano Letters (2020).
3,Zhang, Ziyang, et al. "Truly Concomitant and Independently Expressed Short‐and Long‐Term Plasticity in a Bi2O2Se‐Based Three‐Terminal Memristor." Advanced Materials 31.3 (2019): 1805769.
4,Tan, Xing, et al. "Synergistical Enhancement of Thermoelectric Properties in n‐Type Bi2O2Se by Carrier Engineering and Hierarchical Microstructure." Advanced Energy Materials 9.31 (2019): 1900354.
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