产品名称:
晶体种类:
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Bi2Te3 碲化铋 (1g)
拓扑绝缘体,红外材料
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纯度:
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>99.999 %
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表征方法:
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EDS,SEM,Raman
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禁带宽度:
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0.3ev
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1,Yao, Jiandong, Zhaoqiang Zheng, and Guowei Yang. "All‐layered 2D optoelectronics: a high‐performance UV–vis–NIR broadband SnSe photodetector with Bi2Te3 topological insulator electrodes." Advanced Functional Materials 27.33 (2017): 1701823.
2,Mamur, Hayati, et al. "A review on bismuth telluride (Bi2Te3) nanostructure for thermoelectric applications." Renewable and Sustainable Energy Reviews 82 (2018): 4159-4169.
3,Ambrosi, Adriano, et al. "Exfoliation of layered topological insulators Bi2Se3 and Bi2Te3 via electrochemistry." ACS nano 10.12 (2016): 11442-11448.
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