名称:超高纯 CuInP2S6 (1g)
晶体种类:
铁电材料
纯度:
>99.999 %
表征方法:
EDS,SEM,Raman
晶体生长方式: CVT 化学气相传输法
1, Belianinov, Alex, et al. "CuInP2S6 room temperature layered ferroelectric." Nano letters 15.6 (2015): 3808-3814.
2, Maisonneuve, V., et al. "Ionic conductivity in ferroic CuInP2S6 and CuCrP2S6." Ferroelectrics 196.1 (1997): 257-260.
3, Simon, A., et al. "Paraelectric-ferroelectric transition in the lamellar thiophosphate CuInP2S6." Chemistry of materials 6.9 (1994): 1575-1580.
4, Banys, J., et al. "Dielectric and ultrasonic investigation of phase transition in CuInP2S6 crystals." Phase Transitions 77.4 (2004): 345-358.
5,Si, Mengwei, et al. "Ferroelectric field-effect transistors based on MoS2 and CuInP2S6 two-dimensional van der Waals heterostructure." Acs Nano 12.7 (2018): 6700-6705.
6, Niu, Lin, et al. "Controlled synthesis and room-temperature pyroelectricity of CuInP2S6 ultrathin flakes." Nano Energy 58 (2019): 596-603.
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