碳化硅衬底外延石墨烯
产品照片：
A high-quality epitaxial monolayer graphene is fabricated on Si-face of semi-insulating, transparent {0001} 4H-SiC substrates via solid-state graphitization. During the sublimation process, a specific buffer layer that has a distorted graphene-like structure forms between the graphene film and the underlying SiC substrate. Both the substrate and the buffer layer influence the electronic properties, resulting in intrinsic n-doping of the epitaxially grown monolayer graphene.
Note: Graphene side is facing up in the box. Take precaution while handling the sample to avoid any damage to the film.
Key Features:
Excellent carrier mobility
Controlled growth of Graphene layers
Better purity of the samples
Potential scalable method for graphene fabrication
样品参数：
衬底参数：
样品表征：
Raman:
透过：
霍尔效应测试：
留言咨询
|
| 温馨提示：苏州北科纳米供应产品仅用于科研，不能用于人体,不同批次产品规格性能有差异。网站部分文献案例图片源自互联网，图片仅供参考，请以实物为主，如有侵权请联系我们立即删除。 |
上一款： 没有了...
下一款： 黑磷/InSe 异质结
