2英寸氮化铝厚膜晶片
性能参数：
-
-
Item AlN-T-C-C50 Dimension Ф 50.8 ± 0.2 mm Thickness/Thickness STD 1-5μm±10%/<3% Orientation of AIN C-plane (0001) off angle toward A-axis 0.2±0.1° Orientation Flat of AIN （1-100）0±0.2°，16±1mm Conduction Type Semi-Insulating XRD Crystal Quality [1,2)μm [2,3)μm [3,4)μm [4,5)μm (0002)FWHM(arcsec) ≤80 ≤100 ≤120 ≤160 (10-12)FWHM(arcsec) ≤650 ≤550 ≤450 ≤400 Structure ~1-5AIN/~20nm AIN buffer/430±25μm sapphire Edge Exclusion ≤2.5μm Through Crack None Orientation of sapphire C plane(0001) off angle toward M-axis 0.2±0.1° Orientation Flat of sapphire (11-20)0±0.2°，16±1mm
Sapphire Polish Single side polished(SSP)/Double side polished (DSP) Package Packagesd in a cleanroom in containers
留言咨询
|
| 温馨提示：苏州北科纳米供应产品仅用于科研，不能用于人体,不同批次产品规格性能有差异。网站部分文献案例图片源自互联网，图片仅供参考，请以实物为主，如有侵权请联系我们立即删除。 |
