10¡Á10.5mm2 GaN self-supporting wafer (non-doped)
¡¾Numbering¡¿BK2020081704 | ¡¾CAS¡¿ | ||
¡¾Item No.¡¿ | ¡¾specification¡¿ | ||
|
¡¾Numbering¡¿BK2020081704 | ¡¾CAS¡¿ | ||
¡¾Item No.¡¿ | ¡¾specification¡¿ | ||
|
Product number | GaN-FS-C-U-S10 |
Size | 10¡Á10.5mm2 |
Thickness | 350¡À25¦Ìm |
Crystal orientation | C-plane£¨0001£©off angle toward M-Axis 0.35¡ã¡À0.15¡ã |
TTV | ¡Ü10¦Ìm |
Curvature | ¡Ü10¦Ìm |
Conductivity type | N-type |
Resistivity (300 K) | < 0.1¦¸¡¤cm |
Dislocation density | From 1x105 to 3x106cm-2 |
Effective area | >90% |
Polished |
Front Surface£ºRa£¼0.2 nm(polished); or <0.3nm(polished and surface treatment for epitaxy) |
Back Surface£º0.5~1.5¦Ìm; option£º1-3nm(Fine ground);<0.2nm(polished) |
|
package |
Packaged in a class 100 clean room environment, in single container,under a nitrogen atmosphere. |
Warm tips: Suzhou Beike nano products are only used for scientific research, not for human body,different batches of products have different specifications and performance |
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Warm tips: Suzhou Beike nano products are only used for scientific research, not for human body,different batches of products have different specifications and performance.The website pictures are from the Internet. The pictures are for reference only. Please take the real object as the standard. In case of infringement, please contact us to delete them immediately. |
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