2-inch GaN thick film wafer (Mg doped)
| 【Numbering】BK2020081714 | 【CAS】 | ||
| 【Item No.】 | 【specification】 | ||
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Performance parameters:
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Product number GaN-T-C-P-C50 Size Ф50.8 ± 0.1 mm Thickness 4.5±0.5 μm Crystal orientation C-plane(0001) ± 0.5° Conductivity type P-type(Mg-doped) Resistivity (300 K) ~10Ω·cm Carrier concentration > 6x1016cm-3 Mobility ~ 10cm2/V•s Dislocation density Less than 5x108cm-2(estimated by FWHMs of XRD) Substrate structure GaN on sapphire (standard :SSP option:DSP) Effective area >90% package Packaged in a class 100 clean room environment, in cassette of 25pcs
or single container , under a nitrogen atmosphere.
| Warm tips: Suzhou Beike nano products are only used for scientific research, not for human body,different batches of products have different specifications and performance |
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