GeS2 germanium disulfide crystal
| 【Numbering】BK2021052402 | 【CAS】 | ||
| 【Item No.】 | 【specification】 | ||
|
|||
Material name: GaGeTe
Property classification: Topological insulators, semiconductors, infrared materials, thermoelectric materials,
Band gap:0.2 eV
Synthesis method:CVT
Difficulty of peeling: Easy
Message
Property classification: Topological insulators, semiconductors, infrared materials, thermoelectric materials,
Band gap:0.2 eV
Synthesis method:CVT
Difficulty of peeling: Easy
Precautions for storage:The crystal is stable and does not require special storage
Crystal structure
| Warm tips: Suzhou Beike nano products are only used for scientific research, not for human body,different batches of products have different specifications and performance |
Message
|
| Warm tips: Suzhou Beike nano products are only used for scientific research, not for human body,different batches of products have different specifications and performance.The website pictures are from the Internet. The pictures are for reference only. Please take the real object as the standard. In case of infringement, please contact us to delete them immediately. |
No video
Previous： the end...
Next： Nitrogen-doped graphdi
