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image Numbering/CAS Item No. Name/Specification price
2 inch aluminum nitride thick film wafer BK2020081715

2 inch aluminum nitride thick film wafer
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2-inch GaN thick film wafer (Mg doped) BK2020081714

2-inch GaN thick film wafer (Mg doped)
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2-inch GaN thick film wafer (Si doped) BK2020081713

2-inch GaN thick film wafer (Si doped)
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2-inch GaN thick film wafer (undoped) BK2020081712

2-inch GaN thick film wafer (undoped)
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4-inch GaN thick film wafer (Si doped) BK2020081711

4-inch GaN thick film wafer (Si doped)
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4-inch GaN thick film wafer (undoped) BK2020081710

4-inch GaN thick film wafer (undoped)
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Non-polar/semi-polar GaN self-supporting substrate (SP surface) BK2020081709

Non-polar/semi-polar GaN self-supporting substrate (SP surface)
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Non-polar/semi-polar GaN free-standing substrate (M side) BK2020081708

Non-polar/semi-polar GaN free-standing substrate (M side)
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Non-polar/semi-polar GaN free-standing substrate (A side) BK2020081707

Non-polar/semi-polar GaN free-standing substrate (A side)
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10×10.5mm2 GaN self-supporting wafer (Fe doped) BK2020081706

10×10.5mm2 GaN self-supporting wafer (Fe doped)
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10×10.5mm2 GaN self-supporting wafer (Si doped) BK2020081705

10×10.5mm2 GaN self-supporting wafer (Si doped)
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10×10.5mm2 GaN self-supporting wafer (non-doped) BK2020081704

10×10.5mm2 GaN self-supporting wafer (non-doped)
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2-inch GaN self-supporting wafer (Fe doped) BK2020081703

2-inch GaN self-supporting wafer (Fe doped)
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2-inch GaN self-supporting wafer (Si doped) BK2020081702

2-inch GaN self-supporting wafer (Si doped)
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2-inch GaN self-supporting wafer (undoped) BK2020081701

2-inch GaN self-supporting wafer (undoped)
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多孔碳材料 BKNM2020-12-24
cas

Porous carbon material
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